Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract] - Les productions scientifiques du groupe CS du laboratoire plasma et conversion d’énergie
Communication Dans Un Congrès Année : 2024

Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract]

Résumé

The authors proposed in-depth experimentation and physical analysis showing the extreme robustness capability of low-voltage GaN HEMT in single and repetitive short-circuit. A 2DEG pinch-off behavior is analyzed depending on VDS voltage and charges' trapping / de-trapping relaxation time. A new drain-gate leakage-current mechanism at turn-off is suggested to explain the ultimate thermal-runaway failure-mechanism.
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Dates et versions

hal-04713127 , version 1 (03-10-2024)

Identifiants

  • HAL Id : hal-04713127 , version 1

Citer

Frédéric Richardeau, Lucien Ghizzo, David Trémouilles, Sébastien Vinnac. Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract]. 35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2024, Sep 2024, Parma, Italy. ⟨hal-04713127⟩
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